2D materials are becoming increasingly relevant in state of the art device development. Using a combination of the surface sensitive techniques Inverse Photoelectron Spectroscopy (IPES) and Ultraviolet Photoelectron Spectroscopy (UPS), we demonstrate how the analyst can obtain information on the nature of the electronic properties for single and multi-layer stacks. In this example the properties of a thin layer of MoS2 are investigated. Bulk MoS2 is a diamagnetic, indirect bandgap semiconductor similar to silicon, with a bandgap of ~1.2 eV. However, with reduced thickness the bandgap increases with a confinement-induced shift of the indirect gap from the bulk value. Thickness/growth control is therefore critical to the performance of this material in next-generation devices.